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• W1978370518 abstract "Polymer field effect transistors (PFETs) were made from polymeric semiconductors and insulators on flexible polymeric substrates. The electrodes were patterned from thin films of conducting polymers or metals using an excimer laser. This technique yields highly resolved source and drain electrode patterns with channel lengths below 10 μm which is a preposition for fast transistors and electronic circuits. Together with the available processing rates this technique makes a well-balanced compromise between pattern resolution and processing demands. Moreover, these PFETs show a long-term stability of more than two years without any special protection." @default.
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• W1978370518 date "2005-08-01" @default.
• W1978370518 modified "2023-09-23" @default.
• W1978370518 title "Polymer field effect transistors made by laser patterning" @default.
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• W1978370518 doi "https://doi.org/10.1016/j.orgel.2005.04.003" @default.
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