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• W1978392565 abstract "The spin-dependent transport properties in p-InMnSb/n-InSb magnetic semiconductor heterojunctions are presented. A positive junction giant magnetoresistance is observed from 75 to 298 K. The magnetoresistance is attributed to conduction via two spin channels resulting from p-d exchange interaction. The magnetoconductance of the heterojunction and its magnetic field dependence are well-described by a two-band model where the bands are spin-polarized. At 75 K and zero field, the spin polarization in the alloy is 90% and decreases to 48% at 298 K. The large spin polarization indicates that InMnSb should be suitable for spin-based transistors that operate at room temperature." @default.
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• W1978392565 date "2011-05-09" @default.
• W1978392565 modified "2023-09-27" @default.
• W1978392565 title "Spin-dependent magnetotransport in a p-InMnSb/n-InSb magnetic semiconductor heterojunction" @default.
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• W1978392565 doi "https://doi.org/10.1063/1.3589987" @default.
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