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- W1978393637 endingPage "1991" @default.
- W1978393637 startingPage "1990" @default.
- W1978393637 abstract "Electroluminescence (EL) in GaN high electron mobility transistors (HEMTs) biased at high drain-source voltages was investigated. The electroluminescence was observed at the drain edge where the high-field region is formed. This is quite different from the case of GaAs HEMTs where luminescence was observed at the gate edge. EL spectroscopy was also performed. The luminescence with the wavelength of visible to near-infrared light, the energy of which was less than the band gap energy, was observed with polarization in the direction parallel to the drain current." @default.
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- W1978393637 date "2002-04-15" @default.
- W1978393637 modified "2023-10-16" @default.
- W1978393637 title "Electroluminescence in AlGaN/GaN High Electron Mobility Transistors under High Bias Voltage" @default.
- W1978393637 cites W2090935082 @default.
- W1978393637 doi "https://doi.org/10.1143/jjap.41.1990" @default.
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