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- W1978393969 abstract "In this paper first results on the growth of thin layers of Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> , HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> and nanolaminates of them, by atomic layer deposition are reported. The electrical characterization of the deposited layers has been carried out by means of the analysis of the capacitance-voltage and current-voltage characteristics of aluminum-high-k dielectric-silicon capacitors. The obtained results show that for the same physical thickness, HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> layers are leakier than Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> layers and that a nanolaminate stack of them improves the performance of the dielectric in terms of current and breakdown voltage although at the expense of a higher EOT." @default.
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- W1978393969 date "2009-02-01" @default.
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- W1978393969 title "Thin high-k dielectric layers deposited by ALD" @default.
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- W1978393969 doi "https://doi.org/10.1109/sced.2009.4800421" @default.
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