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• W1978399044 abstract "Electrical-conductivity and Hall-coefficient measurements have been used to investigate the crystal growth and irradiation-temperature dependence of the introduction and annealing of defects in electron-irradiated $n$-type silicon. Irradiations of 10-ensuremath{Omega} cm, phosphorus-doped silicon with 1.7-MeV electrons were performed at controlled temperatures between 75 and 300ifmmode^circelsetextdegreefi{}K, and isochronal annealing was investigated between 80 and 700ifmmode^circelsetextdegreefi{}K. Both intrinsic defects and impurity-associated defects are observed. The impurity independence of annealing between 100 and 200ifmmode^circelsetextdegreefi{}K suggests the annealing of intrinsic defects. The introduction rate for these intrinsic defects is independent of the irradiation temperature between 75 and 100ifmmode^circelsetextdegreefi{}K. The introduction rates for the impurity-associated defects, however, exhibit an exponential dependence on the reciprocal irradiation temperature between 75 and 100ifmmode^circelsetextdegreefi{}K consistent with a model based on metastable vancacy-interstitial pairs that predicts a temperature-dependent probability for vacancy-interstitial dissociation during irradiation and subsequent trapping by crystal impurities. For irradiations above 100ifmmode^circelsetextdegreefi{}K, the introduction rates of impurity-associated defects are relatively independent of the irradiation temperature. Excluding the carrier-removal annealing which is associated with the intrinsic-defect stage, 90% of the annealing in crucible-grown silicon and ensuremath{sim}70% of the annealing in float-zone, Dash, and Lopex silicon correlate with the annealing of the divacancy and impurity-associated defects observed in EPR and optical-absorption studies on $n$-type silicon. In crucible-grown silicon, the annealing temperatures of the dominant electrically active, impurity-associated defects correlate with those for the $A$ center and other oxygen-associated defects. Measurements of carrier concentration versus temperature provide additional evidence for the dominance of the $A$ center which has an energy level near ${E}_{c}ensuremath{-}0.185$ eV, where ${E}_{c}$ is the energy of the conduction-band minimum. A level near ${E}_{c}ensuremath{-}0.13$ eV also is observed in crucible-grown silicon for the oxygen-associated defects responsible for reverse annealing between 200 and 250ifmmode^circelsetextdegreefi{}K. In float-zone silicon, the annealing temperatures of the dominant electrically active defects correlate with the $E$-center and divacancy annealing. Lopex silicon is very similar to Dash silicon, and in these materials all the annealing stages of crucible and float-zone silicon are observed." @default.
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• W1978399044 date "1967-11-15" @default.
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• W1978399044 title "Electrical Studies of Electron-Irradiated<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mi>n</mml:mi></mml:math>-Type Si: Impurity and Irradiation-Temperature Dependence" @default.
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• W1978399044 doi "https://doi.org/10.1103/physrev.163.790" @default.
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