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• W1978433234 abstract "We report on novel pn Ge photodetectors fabricated on glass. The fabrication consists of wafer bonding and layer splitting, followed by a low-temperature epitaxial growth of Ge. The photodiodes are characterized in terms of dark current and responsivity, and their performance compared with devices realized on either Ge or Si. The minimum current density is 50 μA/cm2 at 1 V reverse bias, the responsivity is 0.2 A/W in the photovoltaic mode, with a maximum of 0.28 A/W at 1.55 μm at a reverse voltage of 5 V." @default.
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• W1978433234 date "2010-02-01" @default.
• W1978433234 modified "2023-10-11" @default.
• W1978433234 title "Germanium on insulator near-infrared photodetectors fabricated by layer transfer" @default.
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• W1978433234 doi "https://doi.org/10.1016/j.tsf.2009.09.134" @default.
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