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- W1978440063 abstract "It is demonstrated both by experiments and by numerical model calculations that electron capture/emission on deep Si related donors (‘DX centres’) in the AlGaAs can lead to significant changes of the pulsed transfer characteristic of AlGaAs/GaAs high electron mobility transistors (HEMTs) at room temperature compared with the static case." @default.
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- W1978440063 date "1986-01-01" @default.
- W1978440063 modified "2023-09-24" @default.
- W1978440063 title "Deep donor trapping effects on the pulsed characteristics of AlGaAs/GaAs HEMTs" @default.
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- W1978440063 doi "https://doi.org/10.1049/el:19860230" @default.
- W1978440063 hasPublicationYear "1986" @default.
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