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- W1978471413 abstract "The large single crystals of stoichiometric and nonstoichiometric Gd monopnictides GdX (X=P, As, Sb, and Bi) are grown by the mineralization method (for X=P and As) and Bridgman method (for X=Sb and Bi). A systematic investigation of the transport properties of GdX single crystals is presented. We report on measurements of the electric resistivity ensuremath{rho}(T), magnetoresistance ensuremath{rho}(H), and Hall effect performed on the stoichiometric and nonstoichiometric samples at temperatures between 1.6 and 300 K in magnetic fields up to 10 T. The stoichiometric samples behaved as the well-compensated semimetals that order antiferromagnetically at N'eel temperatures ${mathit{T}}_{mathit{N}}$=15.9 K for GdP, 18.7 K for GdAs, 23.4 K for GdSb, and 25.8 K for GdBi. The transverse magnetoresistance measured at low temperature follows a ensuremath{rho}(H)ensuremath{propto}${mathit{H}}^{2}$ law, and a larger positive ratio MRR=[ensuremath{rho}(H)-ensuremath{rho}(0)]/ensuremath{rho}(0) is observed at 10 T for the four stoichiometric samples. The temperature dependence of the resistivity can be explained by the d-f Coulomb exchange interaction at lower temperatures. The Hall-effect measurements yield a carrier concentration n=2.1ifmmodetimeselsetexttimesfi{}${10}^{20}$ ${mathrm{cm}}^{mathrm{ensuremath{-}}3}$ for GdAs and n=4.2ifmmodetimeselsetexttimesfi{}${10}^{20}$ ${mathrm{cm}}^{mathrm{ensuremath{-}}3}$ for GdSb, which are in a good agreement with the de Haas--van Alphen effect measurements. The nonstoichiometric samples showed some anomalies that could be explained qualitatively by the model of trapped magnetic polaron. textcopyright{} 1996 The American Physical Society." @default.
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- W1978471413 date "1996-10-15" @default.
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- W1978471413 title "Electrical transport properties of semimetallic Gd<i>X</i>single crystals (<i>X</i>=P, As, Sb, and Bi)" @default.
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- W1978471413 doi "https://doi.org/10.1103/physrevb.54.10483" @default.
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