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• W1978484424 abstract "This study investigates the adsorption and thermal decomposition of phosphine (PH3) on the Si(100)-(2×1) surface. The adsorption species, dissociation reactions, atomic ordering, and surface morphology of the phosphine/Si(100) surface at temperatures between 300 and 1060 K are examined by scanning tunneling microscopy (STM) and high-resolution core-level photoemission spectroscopy employing synchrotron radiation. The P 2p core level spectra clearly indicate that phosphine molecularly adsorbs at room temperature and partially dissociates into PH2 and H on a time scale of minutes at low (<0.2 ML) coverages. An exposure of >15 Langmuirs (L, 1 Langmuir=10−6 Torr s−1) of phosphine on the Si(100)-(2×1) surface at room temperature produces a saturated and disordered surface. The total amount of P on the saturated surface is ∼0.37 ML as calibrated by the P 2p photoemission intensity. Successive annealing of the saturated surface at higher temperatures converts PH3 into PH2, converts PH2 to P–P dimers, and causes the desorption of PH3. These processes become complete at ∼700 K, and the resulting surface is a H/Si(100)-(2×1) surface interspersed with one-dimensional P–P islands. Desorption of hydrogen from that surface occurs at ∼800 K, and is accompanied by partial displacement of P with Si atoms on the substrate. At 850 K, the Si(100) surface, interspersed with 0.22 ML of two-dimensional islands, is a random alloy of nominal 0.5 ML Si–P heterodimers and 0.5 ML Si–Si dimers." @default.
• W1978484424 created "2016-06-24" @default.
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• W1978484424 date "1999-03-01" @default.
• W1978484424 modified "2023-10-09" @default.
• W1978484424 title "Thermal reactions of phosphine with Si(100): a combined photoemission and scanning-tunneling-microscopy study" @default.
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• W1978484424 doi "https://doi.org/10.1016/s0039-6028(98)00943-1" @default.
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