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- W1978488002 abstract "In situ Raman scattering spectroscopy is performed in order to probe the chemical dynamics and structure modifications at Ar and SF6 low-pressure plasma-etched silicon surfaces. An Ar plasma induces relatively slight perturbation of the silicon surface, while a SF6 plasma creates highly disordered overlayers induced by the fluorine atoms reacting at ion-induced defects. The overlayer structure is a mixing of an amorphous phase and 10 AA microcrystallites expected to be close to porous silicon structure." @default.
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- W1978488002 date "1994-01-03" @default.
- W1978488002 modified "2023-09-23" @default.
- W1978488002 title "In situ Raman spectroscopy of silicon surfaces during SF<sub>6</sub>plasma etching" @default.
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- W1978488002 doi "https://doi.org/10.1088/0953-8984/6/1/001" @default.
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