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• W1978492049 abstract "Ga2O3 dielectric thin films were deposited on (111)-oriented p-type silicon wafers by plasma-enhanced atomic layer deposition using trimethylgallium and oxygen plasma. Structural analysis of the Ga2O3 thin films was carried out using grazing-incidence x-ray diffraction. As-deposited films were amorphous. Upon postdeposition annealing at 700, 800, and 900 °C for 30 min under N2 ambient, films crystallized into β-form monoclinic structure. Electrical properties of the β-Ga2O3 thin films were then investigated by fabricating and characterizing Al/β-Ga2O3/p-Si metal–oxide-semiconductor capacitors. The effect of postdeposition annealing on the leakage current densities, leakage current conduction mechanisms, dielectric constants, flat-band voltages, reverse breakdown voltages, threshold voltages, and effective oxide charges of the capacitors were presented. The effective oxide charges (Qeff) were calculated from the capacitance–voltage (C-V) curves using the flat-band voltage shift and were found as 2.6 × 1012, 1.9 × 1012, and 2.5 × 1012 cm−2 for samples annealed at 700, 800, and 900 °C, respectively. Effective dielectric constants of the films decreased with increasing annealing temperature. This situation was attributed to the formation of an interfacial SiO2 layer during annealing process. Leakage mechanisms in the regions where current increases gradually with voltage were well fitted by the Schottky emission model for films annealed at 700 and 900 °C, and by the Frenkel–Poole emission model for film annealed at 800 °C. Leakage current density was found to improve with annealing temperature. β-Ga2O3 thin film annealed at 800 °C exhibited the highest reverse breakdown field value." @default.
• W1978492049 created "2016-06-24" @default.
• W1978492049 creator A5029884365 @default.
• W1978492049 creator A5032300781 @default.
• W1978492049 creator A5049522568 @default.
• W1978492049 creator A5049876076 @default.
• W1978492049 date "2014-05-21" @default.
• W1978492049 modified "2023-09-23" @default.
• W1978492049 title "Effect of postdeposition annealing on the electrical properties of β-Ga2O3 thin films grown on <i>p-</i>Si by plasma-enhanced atomic layer deposition" @default.
• W1978492049 cites W1513763899 @default.
• W1978492049 cites W1576915588 @default.
• W1978492049 cites W1581892246 @default.
• W1978492049 cites W1628061358 @default.
• W1978492049 cites W1671671988 @default.
• W1978492049 cites W1966430813 @default.
• W1978492049 cites W1970025391 @default.
• W1978492049 cites W1970325626 @default.
• W1978492049 cites W1977300490 @default.
• W1978492049 cites W1989110113 @default.
• W1978492049 cites W1993941376 @default.
• W1978492049 cites W1994690356 @default.
• W1978492049 cites W2011297664 @default.
• W1978492049 cites W2020431932 @default.
• W1978492049 cites W2022176230 @default.
• W1978492049 cites W2024240835 @default.
• W1978492049 cites W2031801282 @default.
• W1978492049 cites W2037087944 @default.
• W1978492049 cites W2050231917 @default.
• W1978492049 cites W2050841505 @default.
• W1978492049 cites W2060079900 @default.
• W1978492049 cites W2061224732 @default.
• W1978492049 cites W2065183056 @default.
• W1978492049 cites W2070195516 @default.
• W1978492049 cites W2070759111 @default.
• W1978492049 cites W2070837727 @default.
• W1978492049 cites W2070946896 @default.
• W1978492049 cites W2073791990 @default.
• W1978492049 cites W2077952780 @default.
• W1978492049 cites W2090978116 @default.
• W1978492049 cites W2093250103 @default.
• W1978492049 cites W2095031274 @default.
• W1978492049 cites W2146879409 @default.
• W1978492049 cites W2322870611 @default.
• W1978492049 cites W892217253 @default.
• W1978492049 doi "https://doi.org/10.1116/1.4875935" @default.
• W1978492049 hasPublicationYear "2014" @default.
• W1978492049 type Work @default.
• W1978492049 sameAs 1978492049 @default.
• W1978492049 citedByCount "36" @default.
• W1978492049 countsByYear W19784920492014 @default.
• W1978492049 countsByYear W19784920492015 @default.
• W1978492049 countsByYear W19784920492016 @default.
• W1978492049 countsByYear W19784920492017 @default.
• W1978492049 countsByYear W19784920492018 @default.
• W1978492049 countsByYear W19784920492019 @default.
• W1978492049 countsByYear W19784920492020 @default.
• W1978492049 countsByYear W19784920492021 @default.
• W1978492049 countsByYear W19784920492022 @default.
• W1978492049 countsByYear W19784920492023 @default.
• W1978492049 crossrefType "journal-article" @default.
• W1978492049 hasAuthorship W1978492049A5029884365 @default.
• W1978492049 hasAuthorship W1978492049A5032300781 @default.
• W1978492049 hasAuthorship W1978492049A5049522568 @default.
• W1978492049 hasAuthorship W1978492049A5049876076 @default.
• W1978492049 hasBestOaLocation W19784920492 @default.
• W1978492049 hasConcept C113196181 @default.
• W1978492049 hasConcept C133386390 @default.
• W1978492049 hasConcept C159985019 @default.
• W1978492049 hasConcept C160671074 @default.
• W1978492049 hasConcept C171250308 @default.
• W1978492049 hasConcept C185592680 @default.
• W1978492049 hasConcept C19067145 @default.
• W1978492049 hasConcept C192562407 @default.
• W1978492049 hasConcept C2777855556 @default.
• W1978492049 hasConcept C43617362 @default.
• W1978492049 hasConcept C49040817 @default.
• W1978492049 hasConcept C56052488 @default.
• W1978492049 hasConcept C69544855 @default.
• W1978492049 hasConcept C8010536 @default.
• W1978492049 hasConceptScore W1978492049C113196181 @default.
• W1978492049 hasConceptScore W1978492049C133386390 @default.
• W1978492049 hasConceptScore W1978492049C159985019 @default.
• W1978492049 hasConceptScore W1978492049C160671074 @default.
• W1978492049 hasConceptScore W1978492049C171250308 @default.
• W1978492049 hasConceptScore W1978492049C185592680 @default.
• W1978492049 hasConceptScore W1978492049C19067145 @default.
• W1978492049 hasConceptScore W1978492049C192562407 @default.
• W1978492049 hasConceptScore W1978492049C2777855556 @default.
• W1978492049 hasConceptScore W1978492049C43617362 @default.
• W1978492049 hasConceptScore W1978492049C49040817 @default.
• W1978492049 hasConceptScore W1978492049C56052488 @default.
• W1978492049 hasConceptScore W1978492049C69544855 @default.
• W1978492049 hasConceptScore W1978492049C8010536 @default.
• W1978492049 hasIssue "4" @default.
• W1978492049 hasLocation W19784920491 @default.
• W1978492049 hasLocation W19784920492 @default.
• W1978492049 hasOpenAccess W1978492049 @default.
• W1978492049 hasPrimaryLocation W19784920491 @default.
• W1978492049 hasRelatedWork W1993496899 @default.
• W1978492049 hasRelatedWork W2043673973 @default.

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