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- W1978508046 abstract "The rate of silicon etching by ${mathrm{XeF}}_{2}$ is dependent on the type of dopant and the doping level. Soft-x-ray photoemission was used in an effort to elucidate the mechanism responsible for this phenomenon. Si(111) samples were subjected to sufficient ${mathrm{XeF}}_{2}$ to reach the steady-state etching regime, and spectra were collected of the fluorosilyl reaction intermediate species that form on the surface. Samples that were lightly doped (${10}^{17}$ ${mathrm{cm}}^{mathrm{ensuremath{-}}3}$) showed virtually no difference between p and n doping, while heavily doped samples (${10}^{20}$ ${mathrm{cm}}^{mathrm{ensuremath{-}}3}$) showed a marked difference. The heavily doped n-type sample had a slightly thinner reaction layer than did the lightly doped samples, while the heavily doped p-type sample had a much thicker layer, in which the composition of the layer was also changed. These results are discussed in terms of possible reaction mechanisms." @default.
- W1978508046 created "2016-06-24" @default.
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- W1978508046 date "1988-07-15" @default.
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- W1978508046 title "Effect of sample doping level during etching of silicon by fluorine atoms" @default.
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- W1978508046 doi "https://doi.org/10.1103/physrevb.38.2057" @default.
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