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- W1978587097 abstract "This letter reports the fabrication of polycrystalline silicon thin-film transistors (poly-Si TFT) on glass substrates using Al oxide films by anodizing. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and a four-mask-processed poly-Si TFTs were fabricated with fully self-aligned top gate structure." @default.
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- W1978587097 date "2006-10-01" @default.
- W1978587097 modified "2023-10-17" @default.
- W1978587097 title "Fabricated poly-Si thin film transistor with anodizing Al film using nanoindentation" @default.
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- W1978587097 doi "https://doi.org/10.1109/nmdc.2006.4388967" @default.
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