FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W1978631968> ?p ?o ?g. }

• W1978631968 endingPage "620" @default.
• W1978631968 startingPage "617" @default.
• W1978631968 abstract "Conventional methods of surface preparation for III–V semiconductors, such as thermal annealing and sputtering, are severely limited for InN, resulting in In-enrichment and the introduction of donorlike defects. This is explained in terms of the unusually low Γ-point conduction band minimum of InN with respect to its Fermi stabilization energy. Here, low energy atomic hydrogen irradiation is used to produce clean wurtzite InN surfaces without such detrimental effects. A combination of x-ray photoelectron spectroscopy (XPS) and high-resolution electron-energy-loss spectroscopy was used to confirm the removal of atmospheric contaminants. Low energy electron diffraction revealed a (1×1) surface reconstruction after cleaning. Finally, XPS revealed In∕N intensity ratios consistent with a predominantly In polarity InN film terminated by In-adlayers in analogy with c-plane GaN{0001}-(1×1) surfaces." @default.
• W1978631968 created "2016-06-24" @default.
• W1978631968 creator A5018109984 @default.
• W1978631968 creator A5019478108 @default.
• W1978631968 creator A5019606925 @default.
• W1978631968 creator A5036608579 @default.
• W1978631968 creator A5058039652 @default.
• W1978631968 creator A5065464062 @default.
• W1978631968 creator A5076080096 @default.
• W1978631968 date "2005-06-07" @default.
• W1978631968 modified "2023-09-26" @default.
• W1978631968 title "Clean wurtzite InN surfaces prepared with atomic hydrogen" @default.
• W1978631968 cites W1965059618 @default.
• W1978631968 cites W1967805631 @default.
• W1978631968 cites W2012091793 @default.
• W1978631968 cites W2048088165 @default.
• W1978631968 cites W2053434694 @default.
• W1978631968 cites W2057501067 @default.
• W1978631968 cites W2059442265 @default.
• W1978631968 cites W2061762063 @default.
• W1978631968 cites W2079247164 @default.
• W1978631968 cites W2085487806 @default.
• W1978631968 cites W2099619554 @default.
• W1978631968 cites W2321287749 @default.
• W1978631968 doi "https://doi.org/10.1116/1.1927108" @default.
• W1978631968 hasPublicationYear "2005" @default.
• W1978631968 type Work @default.
• W1978631968 sameAs 1978631968 @default.
• W1978631968 citedByCount "49" @default.
• W1978631968 countsByYear W19786319682012 @default.
• W1978631968 countsByYear W19786319682013 @default.
• W1978631968 countsByYear W19786319682014 @default.
• W1978631968 countsByYear W19786319682016 @default.
• W1978631968 countsByYear W19786319682017 @default.
• W1978631968 countsByYear W19786319682018 @default.
• W1978631968 countsByYear W19786319682019 @default.
• W1978631968 countsByYear W19786319682020 @default.
• W1978631968 crossrefType "journal-article" @default.
• W1978631968 hasAuthorship W1978631968A5018109984 @default.
• W1978631968 hasAuthorship W1978631968A5019478108 @default.
• W1978631968 hasAuthorship W1978631968A5019606925 @default.
• W1978631968 hasAuthorship W1978631968A5036608579 @default.
• W1978631968 hasAuthorship W1978631968A5058039652 @default.
• W1978631968 hasAuthorship W1978631968A5065464062 @default.
• W1978631968 hasAuthorship W1978631968A5076080096 @default.
• W1978631968 hasBestOaLocation W19786319681 @default.
• W1978631968 hasConcept C113196181 @default.
• W1978631968 hasConcept C120665830 @default.
• W1978631968 hasConcept C121332964 @default.
• W1978631968 hasConcept C146088050 @default.
• W1978631968 hasConcept C171250308 @default.
• W1978631968 hasConcept C175708663 @default.
• W1978631968 hasConcept C178187954 @default.
• W1978631968 hasConcept C178790620 @default.
• W1978631968 hasConcept C185592680 @default.
• W1978631968 hasConcept C19067145 @default.
• W1978631968 hasConcept C191897082 @default.
• W1978631968 hasConcept C192562407 @default.
• W1978631968 hasConcept C207114421 @default.
• W1978631968 hasConcept C22423302 @default.
• W1978631968 hasConcept C2779070497 @default.
• W1978631968 hasConcept C3045981 @default.
• W1978631968 hasConcept C43617362 @default.
• W1978631968 hasConcept C46141821 @default.
• W1978631968 hasConcept C51286037 @default.
• W1978631968 hasConcept C512968161 @default.
• W1978631968 hasConcept C535196362 @default.
• W1978631968 hasConcept C77557913 @default.
• W1978631968 hasConceptScore W1978631968C113196181 @default.
• W1978631968 hasConceptScore W1978631968C120665830 @default.
• W1978631968 hasConceptScore W1978631968C121332964 @default.
• W1978631968 hasConceptScore W1978631968C146088050 @default.
• W1978631968 hasConceptScore W1978631968C171250308 @default.
• W1978631968 hasConceptScore W1978631968C175708663 @default.
• W1978631968 hasConceptScore W1978631968C178187954 @default.
• W1978631968 hasConceptScore W1978631968C178790620 @default.
• W1978631968 hasConceptScore W1978631968C185592680 @default.
• W1978631968 hasConceptScore W1978631968C19067145 @default.
• W1978631968 hasConceptScore W1978631968C191897082 @default.
• W1978631968 hasConceptScore W1978631968C192562407 @default.
• W1978631968 hasConceptScore W1978631968C207114421 @default.
• W1978631968 hasConceptScore W1978631968C22423302 @default.
• W1978631968 hasConceptScore W1978631968C2779070497 @default.
• W1978631968 hasConceptScore W1978631968C3045981 @default.
• W1978631968 hasConceptScore W1978631968C43617362 @default.
• W1978631968 hasConceptScore W1978631968C46141821 @default.
• W1978631968 hasConceptScore W1978631968C51286037 @default.
• W1978631968 hasConceptScore W1978631968C512968161 @default.
• W1978631968 hasConceptScore W1978631968C535196362 @default.
• W1978631968 hasConceptScore W1978631968C77557913 @default.
• W1978631968 hasIssue "4" @default.
• W1978631968 hasLocation W19786319681 @default.
• W1978631968 hasOpenAccess W1978631968 @default.
• W1978631968 hasPrimaryLocation W19786319681 @default.
• W1978631968 hasRelatedWork W1967224356 @default.
• W1978631968 hasRelatedWork W1972455535 @default.
• W1978631968 hasRelatedWork W1978631968 @default.
• W1978631968 hasRelatedWork W2049426047 @default.

• next