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• W1978663205 abstract "Amorphous silicon-boron-carbon-nitrogen alloys were deposited by reactive magnetron sputtering, and their bonding statistics and electronic structure were investigated using a combined approach of experiment and molecular dynamics simulations. The authors show a difference between Si-based and C-based Si–B–C–N networks, and investigate coordination numbers and behavior of individual atom types. Furthermore, the authors calculate electronic structure and photoconductivity of the materials. The authors find that both a higher Si∕C ratio and an addition of hydrogen increase a band gap of the materials." @default.
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• W1978663205 date "2007-08-01" @default.
• W1978663205 modified "2023-09-23" @default.
• W1978663205 title "Bonding statistics and electronic structure of novel Si–B–C–N materials: <i>Ab initio</i> calculations and experimental verification" @default.
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• W1978663205 doi "https://doi.org/10.1116/1.2764081" @default.
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