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• W1978667493 startingPage "14293" @default.
• W1978667493 abstract "We have studied an in situ low-temperature molecular-beam-epitaxy growth of Si from an initially imperfect Si(111) surface which contains residual local steps. It was found that the growth process not only creates a rough phase with (111) orientation but also produces multiple facets with (112) and (113) orientations. These facet structures were observed to have threefold (120ifmmode^circelsetextdegreefi{}) symmetry, which suggests the possibility that the facets form two kinds of pyramids, one consisting of three (112) faces and the other three (113) faces. However, such facet structures cannot be created if the growth starts from an initially flat surface which is step-free within ensuremath{sim}1000 AA{} terraces width." @default.
• W1978667493 created "2016-06-24" @default.
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• W1978667493 date "1995-05-15" @default.
• W1978667493 modified "2023-10-14" @default.
• W1978667493 title "Formation of facets and pyramidlike structures in molecular-beam-epitaxy growth of Si on a singular Si(111) surface" @default.
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• W1978667493 doi "https://doi.org/10.1103/physrevb.51.14293" @default.
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