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- W1978674901 abstract "A BP buffer layer was grown on Si(100) substrates by using halide vapor phase epitaxy (HVPE) technique, and a uniform and continuous BP layer was successfully grown monocrystalline on the window area. The roughness of the BP surface is much improved at the area grown over SiO 2 , which was confirmed by AFM observation. The growth of GaN was carried out by metal organic chemical vapor deposition (MOCVD) on normal BP/Si. It is found that the selective epitaxial growth is possible on Si(100) substrates using a SiO 2 as a mask material. The results of selective growth and roughness will be discussed." @default.
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- W1978674901 date "2002-05-01" @default.
- W1978674901 modified "2023-09-25" @default.
- W1978674901 title "Growth of GaN on Si(100) substrates using BP as a buffer layer—selective epitaxial growth" @default.
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- W1978674901 doi "https://doi.org/10.1016/s0921-5107(02)00013-2" @default.
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