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- W1978700861 abstract "Abstract The Si(100)-(2 × 1) surface is studied after interaction with SiH 4 under UHV-CVD conditions between 550 and 690 K with high-resolution scanning tunneling microscopy. In this temperature region, new metastable cross-shaped structural tetramer units are formed in addition to small Si islands and patches of hydrogen-terminated substrate. These tetramers are interpreted as a combination of four SiH 2 groups connecting four Si substrate atoms." @default.
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- W1978700861 date "1997-04-01" @default.
- W1978700861 modified "2023-09-24" @default.
- W1978700861 title "Tetramer formation on Si(100)-(2 × 1) during CVD growth from SiH4" @default.
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- W1978700861 doi "https://doi.org/10.1016/s0039-6028(96)01534-8" @default.
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