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• W1978704127 abstract "Silicon–germanium single crystals with a Si content up to 10 at. % have been grown by the vertical Bridgman technique in a monoellipsoid mirror furnace. Single crystal regions up to 50 at. % have been realized by zone melting in a double ellipsoid mirror furnace. The typical high temperature gradients of radiation heated facilities (grad T up to 100 K/cm or even higher, depending on the sample geometry) reduce the occurrence of constitutional supercooling and stabilize the growth interface. Photoluminescence measurements as well as rocking curves and etch pit densities reveal a high crystal quality. Effective segregation coefficients of Al, Ga, In, P, As, and Sb in Ge1−xSix (x&lt;13 at. %) were determined." @default.
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• W1978704127 date "1998-05-01" @default.
• W1978704127 modified "2023-10-03" @default.
• W1978704127 title "Germanium-rich SiGe bulk single crystals grown by the vertical Bridgman method and by zone melting" @default.
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• W1978704127 doi "https://doi.org/10.1116/1.589950" @default.
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