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- W1978707417 abstract "p-Type-doped ZnO films were grown on nominally undoped n-ZnO, which is deposited on p-Si:B by electrochemical deposition. The electrical properties of individually doped ZnO:Na/Mg/Sb/Ti films were determined by means of the Hall system at the room temperature. Our results showed that doped ZnO films had high mobility ranging from 11 to 638 cm2/V s, carrier concentration ranging from 6.00 × 1016 to 3.37 ×1019 cm−3, and low resistivity ranging from 1.62 × 10−2 to 21.9 × 10−2 Ω cm. Electroluminescence measurements of obtained homojunctions exhibited three main broad luminescence bands peaking at 2.8, 2.5, and 1.98 eV, respectively. In addition to these broadbands, Fabry–Pérot oscillations were also observed." @default.
- W1978707417 created "2016-06-24" @default.
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- W1978707417 date "2011-09-01" @default.
- W1978707417 modified "2023-09-27" @default.
- W1978707417 title "ZnO homojunction white light-emitting diodes" @default.
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- W1978707417 doi "https://doi.org/10.1063/1.3627247" @default.
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