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- W1978717868 abstract "Abstract With epitaxial overlayers of Ge, grown by MBE on cleaved GaAs(110) surfaces, angle-resolved photoemission and work function were studied in situ. In the submonolayer range the changes of band bending evaluated from the photoemission EDCs and of the work function agree within experimental error. The analysis of the V s (θ) dependence from the more precise work function measurements yields that donor- and acceptor-type surface levels are produced simultaneously and with the same density by the Ge chemisorption. At 320°C the occupation levels were determined as E c − E A ss =0.55±0.05 eV and E c − E A ss =0.88±0.05 eV , and the density of these levels was found to amount to only 6±4% of the Ge coverage. It is concluded that chemisorption of Ge on GaAs(110) produces one type of defect with the differently charged stated D + , D 0 , and D - . These results support and improve the defect model of chemisorption on III–V compounds proposed by Spicer et al." @default.
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- W1978717868 date "1982-07-01" @default.
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- W1978717868 title "On the chemisorption of Ge on GaAs(110) surfaces: UPS and work function measurements" @default.
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- W1978717868 doi "https://doi.org/10.1016/0378-5963(82)90080-0" @default.
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