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• W1978730967 abstract "N + ion implantation at moderate doses (1013–1014cm−2) into nominally undoped (n∼1017cm−3) bulk single-crystal ZnO substrates followed by annealing in the range 600–950°C was used to fabricate diodes that show visible luminescence at 300K and band-edge electroluminescence at 120K (∼390nm) under forward bias conditions. The current-voltage behavior of the diodes are characteristic of metal-insulator-semiconductor devices and suggest the implantation creates a more resistive region in the n-ZnO in which holes are created by impact ionization during biasing, similar to the case of electroluminescence in ZnO varistors. The series resistance is only 25Ω due to the use of the conducting ZnO substrate." @default.
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• W1978730967 date "2006-03-06" @default.
• W1978730967 modified "2023-10-18" @default.
• W1978730967 title "Band-edge electroluminescence from N+-implanted bulk ZnO" @default.
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• W1978730967 doi "https://doi.org/10.1063/1.2186508" @default.
• W1978730967 hasPublicationYear "2006" @default.
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