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• W1978757010 abstract "The deformation in the hysteresis loop of Pt/Pb(Zr,Ti)O3/Pt capacitors has been investigated by varying the annealing temperature after patterning the top sputter-deposited electrode using reactive ion etching (RIE) with Ar gas. It was observed that as-patterned capacitors were positively poled by the dc plasma potential during RIE of Pt. Voltage shift and slant in the hysteresis loop are found to be due to space charges trapped at domain boundaries during both sputtering and RIE rather than a nonferroelectric second phase. As Zr:Ti ratio decreases, internal bias field increases, and annealing temperature, at which maximum in polarization occurs, also increases due to lower permittivity and higher Curie temperature." @default.
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• W1978757010 date "1997-11-01" @default.
• W1978757010 modified "2023-09-24" @default.
• W1978757010 title "Influence of annealing on the ferroelectric properties of Pt/Pb(Zr,Ti)O3/Pt thin film capacitors" @default.
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• W1978757010 doi "https://doi.org/10.1016/s0040-6090(97)00410-0" @default.
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