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• W1978761246 startingPage "101906" @default.
• W1978761246 abstract "The characteristic defect microstructure of epitaxial wurtzite ScxGa1−xN films on GaN was investigated. Threading dislocations in ScxGa1−xN are inclined with respect to [0001] to relieve in-plane compressive strains. However, increased densities of I1-type basal plane stacking faults and nanoscale lamellar zinc-blende inclusions in the (0001) plane occur with increasing x, in contrast to ScxAl1−xN. This behaviour occurs because the formation energy of the zinc-blende phase is close to that of the wurtzite phase for low Sc-content ScxGa1−xN but not for ScxAl1−xN." @default.
• W1978761246 created "2016-06-24" @default.
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• W1978761246 date "2014-03-10" @default.
• W1978761246 modified "2023-10-14" @default.
• W1978761246 title "Defects in epitaxial ScGaN: Dislocations, stacking faults, and cubic inclusions" @default.
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• W1978761246 doi "https://doi.org/10.1063/1.4868538" @default.
• W1978761246 hasPublicationYear "2014" @default.
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