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• W1978762093 abstract "Polysilicon TFTs were fabricated using solid phase crystallization (SPC) and also two different excimer laser annealing techniques (ELA) for polysilicon crystallization. Moreover, we tried two different gate oxide deposition methods, using PECVD or TEOS LPCVD. Comparing the characteristics of the fabricated TFTs, we were able to probe the effects of the polysilicon crystallization techniques and the gate oxide deposition methods on TFT performance and reliability. This way, an optimization of the TFT fabrication procedure could be possible. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
• W1978762093 created "2016-06-24" @default.
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• W1978762093 date "2008-12-01" @default.
• W1978762093 modified "2023-10-17" @default.
• W1978762093 title "The effect of crystallization technology and gate insulator deposition method on the performance and reliability of polysilicon TFTs" @default.
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• W1978762093 doi "https://doi.org/10.1002/pssc.200780146" @default.
• W1978762093 hasPublicationYear "2008" @default.
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