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- W1978767162 abstract "Ti-deficient SrTi x O 3- d thin films were prepared by high frequency magnetron sputtering. Electric transport and dielectric characterization was carried out by using plate-like capacitors with YBa 2 Cu 3 O 7- d as electrode material. Samples with x = 0.988, 0.98 and 0.89 were measured in the frequency and temperature range between 100 Hz and 100 kHz and 4.2 K and 300 K, respectively. The transport properties of the films were dominated by variable range hopping via localized states. With decreasing x the density of localized states increases nearly linearly indicating that the Ti-deficiency is primarily compensated by the formation of point defects. For low defect concentration, x > 0.89, the dielectric constant is enhanced significantly by the defect formation whereas, for x = 0.89, a very strong decrease of the polarization occurs accompanied by a drastic increase of the dielectric loss, tan d." @default.
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- W1978767162 date "2001-12-01" @default.
- W1978767162 modified "2023-10-17" @default.
- W1978767162 title "Dielectric properties of Ti-deficient SrTiO<sub>3-δ</sub> thin films" @default.
- W1978767162 doi "https://doi.org/10.1051/jp4:20011111" @default.
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