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• W1978788402 abstract "An electrochemical polishing process for an n-GaN(0001) surface with a subsurface damage layer has been developed that involves irradiating with ultraviolet (UV) light and applying a voltage. In this method, a positively biased GaN substrate is exposed to UV light to oxidize its surface. The oxide layer does not dissolve in solution; rather it is chemically removed from the protruding region by a solid acid catalyst, which functions as a polishing pad. The wafer was prepared by mechanical polishing with diamond particles. Without a bias, the removal rate is quite low because photoinduced carriers are rapidly depleted through recombination at crystallographic defects. In contrast, when a bias is applied, photoinduced electrons and holes are forcibly separated so that they contribute to surface oxidation. Consequently, the damaged surface was effectively planarized when a bias was applied." @default.
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• W1978788402 date "2013-02-28" @default.
• W1978788402 modified "2023-09-23" @default.
• W1978788402 title "Bias-Assisted Photochemical Planarization of GaN(0001) Substrate with Damage Layer" @default.
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• W1978788402 doi "https://doi.org/10.7567/jjap.52.036504" @default.
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