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- W1978810462 abstract "Thin-film transistors (TFTs) with a high stability and a high field-effect mobility have been achieved using W-doped indium oxide semiconductors in a low-temperature process (∼150 °C). By incorporating WO3 into indium oxide, TFTs that were highly stable under a negative bias stress were reproducibly achieved without high-temperature annealing, and the degradation of the field-effect mobility was not pronounced. This may be due to the efficient suppression of the excess oxygen vacancies in the film by the high dissociation energy of the bond between oxygen and W atoms and to the different charge states of W ions." @default.
- W1978810462 created "2016-06-24" @default.
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- W1978810462 date "2014-04-14" @default.
- W1978810462 modified "2023-10-10" @default.
- W1978810462 title "Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability" @default.
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- W1978810462 doi "https://doi.org/10.1063/1.4871511" @default.
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