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- W1978859789 abstract "An investigation of the relation between silane electron impact dissociation and deposition rates of microcrystalline silicon thin films, has been performed in highly diluted SiH 4 in H 2 discharges, by applying a combination of experimental measurements and modeling of the process. A wide range of frequencies (13.56 MHz - 50 MHz), power densities (11 mW/cm 2 -162 mW/cm 2 ) and silane partial pressures (2% - 6%) at two total SiH 4 /H 2 pressures of 0.5 Torr and 1 Torr has been studied. In the lower pressure, independent of all other discharge parameters, SiH 4 primary dissociation has been found to be responsible for about 70% of the total silane consumption in the discharge, while a fraction of 12% of the initially produced silicon hydrides are incorporated into the growing film. The increase of pressure leads to a drop of the contribution of the SiH4 primary dissociation to the total silane consumption and to an increase of the deposition efficiency of the initially produced radicals to a value of 26%. This result is attributed to the production of additional, two silicon atom precursors via secondary gas-phase reactions." @default.
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- W1978859789 date "2001-08-01" @default.
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- W1978859789 title "Electron-impact silane dissociation and deposition rate relationship in the PECVD of microcrystalline silicon thin films" @default.
- W1978859789 doi "https://doi.org/10.1051/jp4:2001390" @default.
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