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• W1978885872 abstract "In this paper, all-solution-processed low-voltage organic thin-film transistor inverters on polyethylene naphthalate plastic substrate were achieved in the bottom-gate bottom-contact device configuration. In the devices, 6,13-bis(triisopropylsilylethynyl)-pentacene blended with polystyrene was used as the channel layer, and ultraviolet cross-linked polyvinyl alcohol was used as the gate dielectric layer. With optimized inkjet jetting process parameters and a proper polymer dielectric substrate surface, fine silver electrodes were formed as the source, drain, and gate electrodes. The maximum processing temperature was 150°C. The devices show promising performance with a mobility of 0.8 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /(V·s), a subthreshold swing of 100 mV/decade and an ON/OFF ratio of about 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sup> . The fabricated diode-load inverter has a high dc voltage gain up to 67.3 at a supply voltage of 3 V." @default.
• W1978885872 created "2016-06-24" @default.
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• W1978885872 date "2014-04-01" @default.
• W1978885872 modified "2023-10-03" @default.
• W1978885872 title "All-Solution-Processed Low-Voltage Organic Thin-Film Transistor Inverter on Plastic Substrate" @default.
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• W1978885872 doi "https://doi.org/10.1109/ted.2014.2303992" @default.
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