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- W1978894875 abstract "Pb1−xSnxTe single crystal epitaxial layers have been grown from metal-rich solutions on single crystal Pb1−xSnxTe substrates. The layers were grown from melts containing 0.01 to 0.20 atomic fraction tellurium at temperatures from 500 to 750 °C on both 〈111〉 and 〈100〉 oriented substrates. Characterization of the layers was by X-ray, optical, electrical, and etching techniques. Liquidus curves covering the metallic side of the phase diagram were established. Diodes were fabricated from several of the layers using the grown-in junction and were compared with diffused junction diodes prepared from the same substrate material. Incremental resistance values were observed for PbTe and Pb0.83Sn0.17Te diodes at 77 °K that were up to an order of magnitude larger than those observed for diffused diodes. Des couches ëpitaxiales de Pb1−xSnxTe ont été obtenues dans des solutions enrichies de métaux sur substrates de Pb1−xSnxTe. Les couches ont été préparées à partir de solutions contenant 0,01 à 0,20 fraction atomique de tellurium aux temperatures de 500 à 750 °C sur des substrates orientés dans les directions 〈111〉 et 〈100〉. L'action de caractérisation a été faite par les techniques des rayons X, optique et électrique. Les courbes de liquidus qui couvrent le cǒté métallique du diagramme de phase ont été établies. Des diodes ont été fabriquées de plusieurs des couches utilisont la jonction interne et ont été comparées avec les jonctions diffusées preparées du měme matériel. Les valeurs de la résistance observées de diodes épitaxiales pour PbTe et Pb0,83Sn0,17Te à 77 °K furent supérieures à celles des diodes diffusées." @default.
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- W1978894875 date "1971-05-16" @default.
- W1978894875 modified "2023-10-07" @default.
- W1978894875 title "Growth and characterization of lead-tin telluride epitaxial layers" @default.
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- W1978894875 doi "https://doi.org/10.1002/pssa.2210050218" @default.
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