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- W1978894902 abstract "The reaction between molybdenum thin films and single-crystal Si〈111〉 substrates was studied as a function of the concentrations of impurities (mainly oxygen) in the metal film. At a low oxygen concent (1–2 at.%), only the silicide phase MoSi2 was observed, and a thickness proportional to the square root of time corresponding to an average activation energy of 3 eV in the temperature range 545–600 °C was found. During the formation of the silicide the oxygen originally present in the molybdenum films accumulates at the interface between the silicon and the MoSi2. In contrast, a higher oxygen content (4–5 at.%) prevents the formation of any silicide phases in the above temperature range and leads to the formation of MoSi2 and Mo5Si3 phases at temperatures near 800 °C. MoSi2 was always observed at the inner interface with Mo5Si3 on the surface. The oxygen segregates from the silicides and accumulates at the Si-MoSi2 and MoSi2-Mo5Si3 interfaces to form a non-uniform layer of SiOx(x ⩽ 2)." @default.
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- W1978894902 date "1982-08-01" @default.
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- W1978894902 title "Impurity effects in molybdenum silicide formation" @default.
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- W1978894902 doi "https://doi.org/10.1016/0040-6090(82)90030-x" @default.
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