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- W1978896543 abstract "M-plane GaN avalanche p-i-n photodiodes on low dislocation density freestanding m-plane GaN substrates were realized using metal-organic chemical vapor deposition. High quality homoepitaxial m-plane GaN layers were developed; the root-mean-square surface roughness was less than 1 Å and the full-width-at-half-maximum value of the x-ray rocking curve for (101¯0) diffraction of m-plane GaN epilayer was 32 arcsec. High quality material led to a low reverse-bias dark current of 8.11 pA for 225 μm2 mesa photodetectors prior to avalanche breakdown, with the maximum multiplication gain reaching about 8000." @default.
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- W1978896543 date "2010-05-17" @default.
- W1978896543 modified "2023-10-14" @default.
- W1978896543 title "GaN avalanche photodiodes grown on m-plane freestanding GaN substrate" @default.
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- W1978896543 doi "https://doi.org/10.1063/1.3432408" @default.
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