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- W1978921184 abstract "Abstract A new method is presented to determine Si/SiO2 interface recombination parameters. The device employed is constituted by a polysilicon-oxide-semiconductor capacitor with a microscale central junction (a gate-controlled point-junction diode). The excess minority carriers are photo-generated rather than being injected, which results in a one-dimensional current flow normal to the Si/SiO2 interface. The minority carrier quasi-Fermi level is probed at the Si/SiO2 interface by means of the point junction. The one-dimensionality of the current flow and the exact knowledge of the minority carrier quasi-Fermi level permit an accurate measurement of the recombination rate. The method has been applied to characterize p-type 〈100〉 Si/SiO2 interfaces with boron dopant concentrations ranging from 2.2×1015 to 2.0×1017 cm-3. Data analysis has been performed using a numerical scheme to find a quasi-exact solution for the current recombining at the interface. It was found that the interface recombination parameters (trap density and capture cross-sections) depend only weakly on trap energy in a wide range around midgap. The cross-section for capturing electrons (σn) was found to greatly exceed (by a factor of 102 to 103) the cross-section for capturing holes (σp)." @default.
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- W1978921184 date "1987-10-01" @default.
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- W1978921184 title "A new method to determine Si/SiO2 interface recombination parameters using a gate-controlled point-junction diode under illumination" @default.
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- W1978921184 doi "https://doi.org/10.1016/0169-4332(87)90084-5" @default.
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