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- W1978930161 abstract "To achieve quantitative analysis of site-dependent total dose effects in metal-oxide-semiconductor field-effect transistors (MOSFETs), a new imaging technique designated as the reverse-mode single ion beam induced charge (R-mode SIBIC) imaging for sample positioning combined with accurate ion counting has been developed using the single-ion microprobe. With only five He single ions per pixel, we have succeeded in obtaining images of n-ch MOSFET and n-type Si regions fabricated on a p-well without any degradation of device characteristics. The R-mode SIBIC imaging has made it possible to count exactly the number of ions incident upon the MOSFET during radiation hardness tests." @default.
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- W1978930161 date "1994-07-01" @default.
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- W1978930161 title "Reverse-Mode Single Ion Beam Induced Charge (R-mode SIBIC) Imaging for the Test of Total Dose Effects in n-ch Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)" @default.
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- W1978930161 doi "https://doi.org/10.1143/jjap.33.l962" @default.
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