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- W1978959933 abstract "The Shockley-Read-Hall recombination statistics was recently generalised by Dhariwal, Kothari and Jain to include the effect of a finite time of relaxation before the captured carrier settles into its ground state, and by Landsberg to allow for Auger effects and so-called “extra” carriers supplied to the semiconductor from the outside. The combined result of these effects is studied here theoretically, together with the consideration of a simple distribution of trap states. It is found that the surface recombination velocity s has the usual minimum in the near intrinsic state and that s passes through a maximum as a function of excess electron concentration. Both extrema are enhanced if the trap states are distributed over an energy range. Experimental plots of s as a function of excess electron and hole concentrations should yield insight concerning the numerical importance of (a) Auger effects with the participation of traps and (b) relaxation times." @default.
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- W1978959933 date "1983-09-01" @default.
- W1978959933 modified "2023-10-04" @default.
- W1978959933 title "Surface recombination statistics at traps" @default.
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- W1978959933 doi "https://doi.org/10.1016/0038-1101(83)90054-0" @default.
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