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- W1979058536 abstract "Chemical vapor deposition has been been used successfully for the attainment of a single‐crystal growth of gallium arsenide directly on a number of single‐crystal insulating oxide substrates. Several orientation relationships have been determined for GaAs grown on sapphire (α‐Al2O3), spinel (MgAl2O4), beryllium oxide (BeO), and thorium oxide (ThO2)." @default.
- W1979058536 created "2016-06-24" @default.
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- W1979058536 date "1968-02-15" @default.
- W1979058536 modified "2023-10-16" @default.
- W1979058536 title "SINGLE‐CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES" @default.
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- W1979058536 doi "https://doi.org/10.1063/1.1651934" @default.
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