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• W1979059402 abstract "We have developed the theory for the threshold base current, light power output and small signal modulation response of a transistor laser, the base of which contains a quantum well (QW) with a layer of quantum dots (QDs) inserted within it. Our theory involves the solution of the continuity equation for an arbitrary location of the QW in the base, and the solution of coupled rate equations for carriers and photons in the QD. The excitonic recombination model is assumed to be valid in the QD. The estimated threshold base current for InAs QDs embedded in the InGaAs QW is found to be smaller than the value for the InGaAs QW in the GaAs base. The values of the modulation bandwidths for different values of the base current however do not reach the high values obtained for the QW system." @default.
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• W1979059402 date "2011-12-22" @default.
• W1979059402 modified "2023-09-23" @default.
• W1979059402 title "Analytical theory of a small signal modulation response of a transistor laser with dots-in-well in the base" @default.
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• W1979059402 doi "https://doi.org/10.1088/0268-1242/27/1/015022" @default.
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