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- W1979071443 abstract "A well ordered c(8 × 2)-InAs monolayer is grown by molecular beam epitaxy (MBE) on a GaAs(0 0 1) substrate. After slow sublimation of this monolayer up to 560 °C, a homogeneously (n × 6) reconstructed GaAs surface is obtained. This surface is studied by scanning tunneling microscopy (STM) in UHV. This shows that it is well-ordered on a large scale with 200 nm long As dimer rows along [1¯10] and is also locally (12 × 6) reconstructed, the cell structure is proposed. We believe that this surface organization results from the specific As/Ga (0.7) surface atomic ratio obtained after the InAs monolayer growth and sublimation cycle." @default.
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- W1979071443 date "2008-05-01" @default.
- W1979071443 modified "2023-09-25" @default.
- W1979071443 title "Large scale atomic ordering on uncovered GaAs(001) after InAs monolayer capping: Atomic structure of the (12×6) reconstruction" @default.
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- W1979071443 doi "https://doi.org/10.1016/j.susc.2008.02.034" @default.
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