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- W1979112645 abstract "A tensile-strained AlN layer along the a-axis was grown on a (0001) 6H-SiC substrate with a (GaN/AlN) buffer layer by metalorganic vapor phase epitaxy using an alternating source feeding (ASF) technique. It was experimentally demonstrated that the strain in the AlN layer was affected by the growth conditions of the buffer layer. On the other hand, the AlN layer grown directly on a substrate without the buffer layer exhibits compressive strain along the a-axis. Strain control in the AlN layer using the ASF buffer is proposed." @default.
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- W1979112645 date "1999-11-01" @default.
- W1979112645 modified "2023-09-25" @default.
- W1979112645 title "Possibility of Strain Control in AlN Layer Grown by MOVPE on (0001) 6H-SiC with GaN/AlN Buffer" @default.
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- W1979112645 doi "https://doi.org/10.1002/(sici)1521-396x(199911)176:1<665::aid-pssa665>3.0.co;2-2" @default.
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