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- W1979121453 abstract "The effect of the deposition conditions of plasma enhanced chemical vapor deposition (PECVD) SiO 2 layers on the electrical properties of 4H-SiC Schottky rectifiers is reported. In a SiH 4 /N 2 O plasma chemistry, the reverse breakdown voltage, forward turn-on voltage, and on-state resistance of the rectifiers all increase with increasing plasma power and SiH 4 content and decreasing deposition pressure. The maximum changes in all these parameters were ≤20% over a broad range of plasma conditions and show that 4H-SiC is relatively resistant to changes induced by the ion bombardment and high atomic hydrogen flux present during PECVD of dielectrics for surface passivation." @default.
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- W1979121453 date "2003-01-01" @default.
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- W1979121453 title "Influence of PECVD of SiO[sub 2] Passivation Layers on 4H-SiC Schottky Rectifiers" @default.
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- W1979121453 doi "https://doi.org/10.1149/1.1524751" @default.
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