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- W1979210854 abstract "Si<SUB>1-y</SUB>C<SUB>y</SUB> and Si<SUB>1-x-y</SUB>Ge<SUB>x</SUB>C<SUB>y</SUB> layers were grown by multiple energy ion implantation of Ge and C into single crystal Si followed by pulsed excimer laser induced epitaxy. The properties of the alloy layers obtained by this technique, in terms of film crystallinity, Ge and C redistribution and substitutional incorporation, strain formation and relaxation, SiC precipitation and C- induced band gap modification are demonstrated to depend strongly on both ion implantation and laser processing conditions. The growing of large area pseudomorphic epitaxial alloys of group IV semiconductor elements, using the high energy beam excimer laser (up to 1 J/cm<SUP>2</SUP> per pulse over 40 cm<SUP>2</SUP>) developed by SOPRA for industrial applications, is described." @default.
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- W1979210854 date "1998-05-26" @default.
- W1979210854 modified "2023-09-23" @default.
- W1979210854 title "<title>Synthesis of high-quality Si<formula><inf><roman>1-y</roman></inf></formula>C<formula><inf><roman>y</roman></inf></formula> and Si<formula><inf><roman>1-x-y</roman></inf></formula>Ge<formula><inf><roman>x</roman></inf></formula>C<formula><inf><roman>y</roman></inf></formula> epitaxial layers on (100) Si by ion implantation and pulsed excimer laser crystallization</title>" @default.
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- W1979210854 doi "https://doi.org/10.1117/12.308655" @default.
- W1979210854 hasPublicationYear "1998" @default.
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