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• W1979333303 abstract "Reflection high energy electron diffraction (RHEED) intensity oscillations have been studied over a wide range of growth temperatures (300–600°C) and As:Ga flux ratios (2:1–15:1), during the growth of GaAs on singular GaAs(111)A substrates by molecular beam epitaxy (MBE). The oscillation period is strongly dependent on both growth temperature and the As:Ga flux ratio, in contrast to observations on GaAs(001). A growth rate equivalent to that expected from the supply of Ga is only measured (by RHEED) at high As:Ga ratios and/or low growth temperatures. This behaviour can be explained through a model in which arsenic has a low initial sticking coefficient, thus allowing the formation of free Ga at the beginning of growth, alongside two-dimensional (2D) GaAs island growth. Activation energies related to desorption and surface diffusion of the incident As4 have been obtained." @default.
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• W1979333303 date "1994-08-01" @default.
• W1979333303 modified "2023-10-17" @default.
• W1979333303 title "Reflection high energy electron diffraction intensity oscillation study of the growth of GaAs on GaAs(111)A" @default.
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• W1979333303 doi "https://doi.org/10.1016/0039-6028(94)90546-0" @default.
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