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• W1979427474 abstract "Abstract We have developed a technique for depositing single phase Y-type hexaferrite thin films at low substrate temperatures using pulsed laser deposition. Hexagonal Ba 2 Co 2 Fe 12 O 22 thin films were grown on sapphire (0001) by alternating target laser ablation deposition, in which three different targets were used for sequential deposition. The substrate was heated to 910 °C in an atmosphere of pure oxygen. Flash annealing at 1050 °C for 30 min in an oxygen atmosphere induced single phase growth. Structural characterization measurements included composition analysis, X-ray diffractometer and scanning electron microscopy. Magnetic characterization measurements included vibrating sample magnetometer and ferromagnetic resonance. The saturation magnetization was measured to be 2520 G, g =1.52 and the magnetic uniaxial anisotropy field was estimated to be 13.2 kOe. The magnetic and structural measurements are in agreement with bulk parameters." @default.
• W1979427474 created "2016-06-24" @default.
• W1979427474 creator A5019509595 @default.
• W1979427474 creator A5049785420 @default.
• W1979427474 date "2013-10-01" @default.
• W1979427474 modified "2023-09-26" @default.
• W1979427474 title "Growth of Y-type hexaferrite thin films by alternating target laser ablation deposition" @default.
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• W1979427474 doi "https://doi.org/10.1016/j.jmmm.2013.05.050" @default.
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