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- W1979445142 abstract "We will compare basic characteristics of nitride devices prepared by pulsed sputtering deposition (PSD) with those by MOCVD and we will show that low growth temperature of PSD is quite advantageous for fabrication of various devices." @default.
- W1979445142 created "2016-06-24" @default.
- W1979445142 creator A5006008970 @default.
- W1979445142 date "2014-01-01" @default.
- W1979445142 modified "2023-10-01" @default.
- W1979445142 title "Characteristics of Nitride Devices Prepared by Pulsed Sputtering" @default.
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- W1979445142 doi "https://doi.org/10.1364/acpc.2014.af1j.1" @default.
- W1979445142 hasPublicationYear "2014" @default.
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