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- W1979473630 endingPage "826" @default.
- W1979473630 startingPage "820" @default.
- W1979473630 abstract "We report on materials and device characterization of polycrystalline HfO2 gate dielectrics grown by atomic layer deposition (ALD) at 600 °C on strained-Si and strained-SiGe layers. No change in the diffusion profile of Hf into the Si substrate was observed for temperatures in the range 900–1100 °C for 20 min. The strain status in the Si layer remained unaltered after HfO2 deposition and an interface state density of ~1 × 1011 cm−2 eV−1 was obtained for the thicker HfO2 films. The breakdown fields were in the range 2–5 MV cm−1, which is high compared to HfO2 films grown at higher temperatures. The leakage current was reduced by more than five orders of magnitude for the thin HfO2 with an EOT of 1.25 nm and ultra-thin cap (2.5–3 nm) layers on Si0.77Ge0.23/Si, though high interface state densities (~1 × 1012 cm−2 eV−1) were observed. The carrier transport through these HfO2 films was found to follow Frenkel–Poole emission over a wide range of applied gate voltages." @default.
- W1979473630 created "2016-06-24" @default.
- W1979473630 creator A5007472106 @default.
- W1979473630 creator A5008860995 @default.
- W1979473630 creator A5012784303 @default.
- W1979473630 creator A5030089144 @default.
- W1979473630 creator A5044340940 @default.
- W1979473630 creator A5051668693 @default.
- W1979473630 creator A5062770241 @default.
- W1979473630 date "2003-07-02" @default.
- W1979473630 modified "2023-09-30" @default.
- W1979473630 title "HfO<sub>2</sub>gate dielectrics on strained-Si and strained-SiGe layers" @default.
- W1979473630 cites W1501958321 @default.
- W1979473630 cites W1555753450 @default.
- W1979473630 cites W1646308111 @default.
- W1979473630 cites W1971746375 @default.
- W1979473630 cites W1979910265 @default.
- W1979473630 cites W1981879805 @default.
- W1979473630 cites W2003645630 @default.
- W1979473630 cites W2004015682 @default.
- W1979473630 cites W2006812897 @default.
- W1979473630 cites W2010451022 @default.
- W1979473630 cites W2010572588 @default.
- W1979473630 cites W2020260126 @default.
- W1979473630 cites W2030518635 @default.
- W1979473630 cites W2039306559 @default.
- W1979473630 cites W2054885971 @default.
- W1979473630 cites W2057497792 @default.
- W1979473630 cites W2058890346 @default.
- W1979473630 cites W2077605937 @default.
- W1979473630 cites W2092185083 @default.
- W1979473630 doi "https://doi.org/10.1088/0268-1242/18/9/302" @default.
- W1979473630 hasPublicationYear "2003" @default.
- W1979473630 type Work @default.
- W1979473630 sameAs 1979473630 @default.
- W1979473630 citedByCount "15" @default.
- W1979473630 countsByYear W19794736302012 @default.
- W1979473630 countsByYear W19794736302013 @default.
- W1979473630 countsByYear W19794736302017 @default.
- W1979473630 countsByYear W19794736302020 @default.
- W1979473630 countsByYear W19794736302023 @default.
- W1979473630 crossrefType "journal-article" @default.
- W1979473630 hasAuthorship W1979473630A5007472106 @default.
- W1979473630 hasAuthorship W1979473630A5008860995 @default.
- W1979473630 hasAuthorship W1979473630A5012784303 @default.
- W1979473630 hasAuthorship W1979473630A5030089144 @default.
- W1979473630 hasAuthorship W1979473630A5044340940 @default.
- W1979473630 hasAuthorship W1979473630A5051668693 @default.
- W1979473630 hasAuthorship W1979473630A5062770241 @default.
- W1979473630 hasConcept C121332964 @default.
- W1979473630 hasConcept C133386390 @default.
- W1979473630 hasConcept C16317505 @default.
- W1979473630 hasConcept C192562407 @default.
- W1979473630 hasConcept C2780389399 @default.
- W1979473630 hasConcept C49040817 @default.
- W1979473630 hasConcept C544956773 @default.
- W1979473630 hasConcept C61696701 @default.
- W1979473630 hasConceptScore W1979473630C121332964 @default.
- W1979473630 hasConceptScore W1979473630C133386390 @default.
- W1979473630 hasConceptScore W1979473630C16317505 @default.
- W1979473630 hasConceptScore W1979473630C192562407 @default.
- W1979473630 hasConceptScore W1979473630C2780389399 @default.
- W1979473630 hasConceptScore W1979473630C49040817 @default.
- W1979473630 hasConceptScore W1979473630C544956773 @default.
- W1979473630 hasConceptScore W1979473630C61696701 @default.
- W1979473630 hasIssue "9" @default.
- W1979473630 hasLocation W19794736301 @default.
- W1979473630 hasOpenAccess W1979473630 @default.
- W1979473630 hasPrimaryLocation W19794736301 @default.
- W1979473630 hasRelatedWork W1966060981 @default.
- W1979473630 hasRelatedWork W2045924893 @default.
- W1979473630 hasRelatedWork W2355889083 @default.
- W1979473630 hasRelatedWork W2374646600 @default.
- W1979473630 hasRelatedWork W2470411124 @default.
- W1979473630 hasRelatedWork W2863738027 @default.
- W1979473630 hasRelatedWork W2890924564 @default.
- W1979473630 hasRelatedWork W2894388424 @default.
- W1979473630 hasRelatedWork W4224274411 @default.
- W1979473630 hasRelatedWork W4253731651 @default.
- W1979473630 hasVolume "18" @default.
- W1979473630 isParatext "false" @default.
- W1979473630 isRetracted "false" @default.
- W1979473630 magId "1979473630" @default.
- W1979473630 workType "article" @default.