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• W1979515245 abstract "The surface structures of gallium overlayers on Si(100) are studied using LEED and Auger electron spectroscopy (AES). At 300 K, Ga grows epitaxially up to at least 5 ML. In the range of low surface temperatures Ts = 330–600 K, the growth obeys a Stranski-Krastanov mechanism. and the coverage at which island growth begins depends on Ts. Structures are proposed for the observed LEED patterns of Ga on Si(100) (3 × 2, 5 × 2, 2 × 2, 8 × 1 and 2 × 1). Below 0.5 ML, Ga atoms most likely form dimers that fill up the chemically active regions between the Si dimer rows of the 2 × 1 reconstruction. Strong, covalent bonding is expected. Between 0.5 and 1 ML, the Si(100) 2 × 1 reconstruction is removed and the Ga is thought to be out of registry with Si in one dimension, possibly indicating partially delocalized character of the Ga-Ga lateral bonding interactions. At 1 ML, a passivated 2 × 1 surface structure is again observed, most likely dominated by covalent SiGa bonding with Ga dimer rows similar to the Si dimer rows of the reconstructed Si(100) 2 × 1 surface. However, this structure is not observed upon desorption of higher coverages at 840 K; instead, an incommensurate Ga overlayer is obtained. The existence of well-ordered structures suggests that Ga terminated Si(100) surfaces are suitable for epitaxy of GaAs on Si. The companion paper correlates the growth mechanisms, structures and desorption energetics at high temperatures." @default.
• W1979515245 created "2016-06-24" @default.
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• W1979515245 date "1988-10-01" @default.
• W1979515245 modified "2023-09-24" @default.
• W1979515245 title "Surface structures and growth mechanism of Ga ON Si(100) determined by LEED and Auger electron spectroscopy" @default.
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• W1979515245 doi "https://doi.org/10.1016/0039-6028(88)90226-9" @default.
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