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• W1979564191 abstract "The growth and the characterization of AlxIn1−xN/GaN (x>0.75) heterostructures by migration-enhanced metal–organic chemical vapor deposition are optimized through variations in growth temperature and precursor modulation schemes, resulting in high quality films. AlxIn1−xN/GaN heterostructures were characterized by XRD reciprocal space mapping in order to calculate the relative strain to GaN as a function of indium composition. AFM measurements yielded an rms roughness value of ∼4 Å. By controlling indium incorporation, a maximum 2DEG mobility of ∼1270 cm2/V s, a maximum sheet charge density of ∼4.1×1013 cm−2, and a minimum sheet resistance of 179.9 Ω/□ were obtained." @default.
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• W1979564191 date "2011-07-01" @default.
• W1979564191 modified "2023-09-26" @default.
• W1979564191 title "Migration-enhanced metal–organic chemical vapor deposition of AlxIn1−xN/GaN heterostructures (x>0.75) on c-plane sapphire" @default.
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• W1979564191 doi "https://doi.org/10.1016/j.jcrysgro.2011.06.015" @default.
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