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• W1979691569 abstract "Topological insulator (TI) states have been demonstrated in materials with a narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional semiconductors with a sizable gap and small SOI. Based on advanced first-principles calculations combined with an effective low-energy $mathbf{k}ifmmodecdotelsetextperiodcenteredfi{}mathbf{p}$ Hamiltonian, we show that the intrinsic polarization of materials can be utilized to simultaneously reduce the energy gap and enhance the SOI, driving the system to a TI state. The proposed system consists of ultrathin InN layers embedded into GaN, a layer structure that is experimentally achievable." @default.
• W1979691569 created "2016-06-24" @default.
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• W1979691569 date "2012-11-02" @default.
• W1979691569 modified "2023-10-18" @default.
• W1979691569 title "Polarization-Driven Topological Insulator Transition in a<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mi>GaN</mml:mi><mml:mo>/</mml:mo><mml:mi>InN</mml:mi><mml:mo>/</mml:mo><mml:mi>GaN</mml:mi></mml:math>Quantum Well" @default.
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• W1979691569 doi "https://doi.org/10.1103/physrevlett.109.186803" @default.
• W1979691569 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/23215311" @default.
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