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- W1979740178 abstract "The large range of band gaps and unique optical properties of II–VI semiconductors offer important opportunities for physics and device applications. Quantum wells based on Hg1−xCdxTe and Cd1−xZnxTe can give access to many of these properties, at wavelengths varying from the yellow to the long wavelength infrared region of the spectrum. High-quality quantum wells of these materials have been grown on GaAs substrates despite the large lattice mismatch. Growth, optical properties, and results of interdiffusion studies are discussed." @default.
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- W1979740178 date "1990-05-01" @default.
- W1979740178 modified "2023-09-25" @default.
- W1979740178 title "CdZnTe/ZnTe and HgCdTe/CdTe quantum wells grown by molecular beam epitaxy" @default.
- W1979740178 doi "https://doi.org/10.1116/1.576821" @default.
- W1979740178 hasPublicationYear "1990" @default.
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